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NJG1105F - 1 - 1.8/1.9/2.1ghz band low noise amplifier gaas mmic n general description n package outline njg110 5 f is a low noise amplifier gaas mmic designed for 1.8/1.9/2.1ghz digital cellular phone handsets such as dcs1800, pcs and w - cdma . this amplifier provides low noise figure, high gain a nd high ip3 operated by single low positive power supply. n features l low voltage operation +2.8v typ. l low current consumption 7ma typ. l high small signal gain 19db typ. @f=1860mhz 18db typ. @f=1960mhz 15db t yp. @f=2140mhz l low noise figure 1.7db typ. @f=1860/1960/2140mhz l high input ip3 - 3dbm typ. @f=1860.0+1860.1mhz - 3dbm typ. @f=1960.0+1960.1mhz +1dbm typ. @f=2140.0+2140.1mhz l package mtp6 (mount size: 2.8x2.9x1.2mm) n pin configuration note: s pecifications and description listed in this catalog are subject to change without prior notice. NJG1105F (top view) orientation mark pin connection 1.vdd 2.gnd 3.rf out 4.rf in 5.gnd 6.extcap 4 5 6 1 2 3
NJG1105F - 2 - n absolute maximum ratings ( t a = + 25 c , z s =z l =50 w ) parameter symbol condition s ratings units drain voltage v dd 6.5 v input power pin v dd = 2.8 v +15 d bm power dissipation p d 150 m w operating temp. t opr - 4 0 ~+ 85 c storage temp. t stg - 55 ~ +125 c n electrical characteristics 1 (1.8ghz band) ( v dd =2.8v, f=1860mhz, t a = + 25 c , z s =z l =50 w , with application circuit) parameter symbol conditions min typ max units operating frequency freq 1840 1860 1870 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 m a small signal gain gain 17.0 19.0 21.0 d b gain flatne ss g flat f= 1840~1870m hz - 0.5 1.0 d b noise figure nf - 1.7 2.0 db pout at 1db gain compression point p - 1db +1.0 +5.0 - d bm input 3rd order intercept point iip3 f= 1860.0+1860.1m hz , pin= - 35dbm - 7.0 - 3.0 - dbm lnain port vswr vswr i - 1.5 2.0 lnaout p ort vswr vswr o - 1.5 2.0 stability in/out terminal: open or short, no rf input, t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain n electrical characteristics 2 (1.9ghz band) ( v dd =2.8v, f=1960mhz, t a = + 25 c , z s =z l =50 w , with application circu it) parameter symbol conditions min typ max units operating frequency freq 1930 1960 1990 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 ma small signal gain gain 16.0 18.0 20.0 db gain flatness g flat f= 1930~1990m hz - 0. 5 1.0 db noise figure nf - 1.7 2.0 db pout at 1db gain compression point p - 1db +1.0 +4.0 - dbm input 3rd order intercept point iip3 f= 1960.0+1960.1m hz , pin= - 35dbm - 7.0 - 3.0 - dbm lnain port vswr vswr i - 1.5 2.0 lnaout port vswr vswr o - 1.5 2.0 stability in/out terminal: open or short, no rf input, t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain
NJG1105F - 3 - n electrical characteristics 3 (2.1ghz band) ( v dd =2.8v, f=2140mhz, t a = + 25 c , z s =z l =50 w , with application circuit) parameter symbol conditi ons min typ max units operating frequency freq 2110 2140 2170 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 ma small signal gain gain 13.0 15.0 17.0 db gain flatness g flat f= 2110~2140m hz - 0.5 1.0 db noise figure nf - 1.7 1.9 db pout at 1db gain compression point p - 1db +1.0 +4.0 - dbm input 3rd order intercept point iip3 f= 2140.0+2140.1m hz , pin= - 35dbm - 4.0 +1.0 - dbm lnain port vswr vswr i - 1.5 2.0 lnaout port vswr vswr o - 1.5 2.0 stability in/out terminal: open or short, no rf input, t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain n electrical characteristics 4 (1.8ghz band, high gain version) ( v dd =2.8v, f=1860mhz, t a = + 25 c , z s =z l =50 w , with application circuit) parameter symbol conditions min t yp max units operating frequency freq 1840 1860 1870 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 ma small signal gain gain 18.0 20.0 22.0 db gain flatness g flat f= 1840~1870m hz - 0.5 1.0 db noise figure nf - 1.9 2.2 db pout at 1db gain compression point p - 1db +1.0 +4.0 - dbm input 3rd order intercept point iip3 f= 1860.0+1860.1m hz , pin= - 35dbm - 7.5 - 4.5 - dbm lnain port vswr vswr i - 1.5 2.0 lnaout port vswr vswr o - 1.5 2.0 stability in/out terminal: open or s hort, no rf input, t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain
NJG1105F - 4 - n electrical characteristics 5 (1.9ghz band, high gain version) ( v dd =2.8v, f=1960mhz, t a = + 25 c , z s =z l =50 w , with application circuit) parameter symbol conditions min typ max u nits operating frequency freq 1930 1960 1990 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 ma small signal gain gain 17.5 19.5 21.5 db gain flatness g flat f= 1930~1990m hz - 0.8 1.1 db noise figure nf - 1.9 2.2 db pout at 1db gain compression point p - 1db +1.0 +4.0 - dbm input 3rd order intercept point iip3 f= 1960.0+1960.1m hz pin= - 35dbm - 8.5 - 4.5 - dbm lnain port vswr vswr i - 1.5 2.0 lnaout port vswr vswr o - 2.0 3.0 stability in/out terminal: open or short, no rf input, t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain n electrical characteristics 6 (2.1ghz band, high gain version 1) ( v dd =2.8v, f=2140mhz, t a = + 25 c , z s =z l =50 w , with application circuit) parameter symbol conditions min typ max units op erating frequency freq 2110 2140 2170 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 ma small signal gain gain 13.0 15.0 17.0 db gain flatness g flat f= 2110~2140m hz - 0.5 1.0 db noise figure nf - 1.7 1.9 db pout at 1db gain compression point p - 1db 0.0 +3.0 - dbm input 3rd order intercept point iip3 f= 2140.0+2140.1m hz , pin= - 35dbm - 6.5 - 3.5 - dbm lnain port vswr vswr i - 2.0 2.5 lnaout port vswr vswr o - 1.5 2.0 stability in/out terminal: open or short, no rf input , t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain
NJG1105F - 5 - n electrical characteristics 7 (2.1ghz band, high gain version 2) ( v dd =2.8v, f=2140mhz, t a = + 25 c , z s =z l =50 w , with application circuit) parameter symbol conditions min typ max units operating frequency freq 2110 2140 2170 m hz drain voltage v dd 2.7 2.8 5.5 v operating current i dd rf off - 7.0 8.5 ma small signal gain gain 15.0 17.0 19.0 db gain flatness g flat f= 2110~2140m hz - 0.5 1.0 db noise figure nf - 1.7 1.9 db pout at 1db gain co mpression point p - 1db +1.0 +4.0 - dbm input 3rd order intercept point iip3 f= 2140.0+2140.1m hz , pin= - 35dbm - 5.5 - 2.5 - dbm lnain port vswr vswr i - 2.0 2.5 lnaout port vswr vswr o - 1.5 2.0 stability in/out terminal: open or short, no rf input, t a =2 0~80 c , freq<20ghz spurious : - 60dbm max. no return gain
NJG1105F - 6 - n terminal information pin function description 1 vdd bias voltage supply terminal for 1 st stage amplifier. optimized value of inductor l4 is required because it works as matching element. (pleas e refer to ? recommended circuit ? ) 2 ,5 gnd ground pin (0v). 3 rfout rf output and voltage supply pin of 2 nd stage amplifier. external matching circuits and a bypass capacitor is required. inductors c4, l3 work as external output matching elements. (please refer to ? recommended circuit ? ) 4 rfin rf input pin. no dc blocking capacitor is required, but an external matching circuit is required. (please refer to ? recommended circuit ? ) 6 extcap an external bypass capacitor is required. this capacitor works as e xternal matching element. (please refer to ? recommended circuit ? )
NJG1105F - 7 - n typical characteristics (1.8ghz band) -25 -20 -15 -10 -5 0 5 10 15 20 25 -50 -40 -30 -20 -10 0 10 20 30 40 50 1 1.5 2 2.5 3 s21,s11,s22,s12 vs. frequency (v dd =2.8v,i dd =6.5ma) s21,s11,s22 (db) s12 (db) frequency (ghz) s11 s22 s21 s12 18 18.5 19 19.5 20 20.5 21 2.5 3 3.5 4 4.5 5 5.5 gain vs. v dd (f=1.86ghz) v dd (v) gain (db) 4 8 12 16 20 24 1 1.4 1.8 2.2 2.6 3 1.8 1.84 1.88 1.92 1.96 2 nf,gain vs. frequency (v dd =2.8v,i dd =6.5ma) nf (db) gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout (dbm) pin (dbm) output power vs. input power (v dd =2.8v,f=1860mhz) +5.0dbm p-1db -80 -70 -60 -50 -40 -30 -20 -10 0 10 -40 -35 -30 -25 -20 -15 -10 -5 0 (v dd =2.8v,i dd =6.5ma,f=1860+1860.1mhz) pin vs. pout,im3 pin (dbm) pout,im3 (dbm) iip3 -3.3dbm im3 pout 1.2 1.3 1.4 1.5 1.6 1.7 6.2 6.4 6.6 6.8 7 7.2 2.5 3 3.5 4 4.5 5 5.5 nf, i dd vs. v dd (f=1.86ghz) nf (db) i dd (ma) v dd (v)
NJG1105F - 8 - n typical characteristics (1.8ghz band) -2 0 2 4 6 8 10 12 2.5 3 3.5 4 4.5 5 5.5 p-1db vs. v dd (f=1.86ghz) p-1db (dbm) v dd (v) -6 -5 -4 -3 -2 -1 0 1 2 3 4 10 11 12 13 14 15 16 17 18 19 20 2.5 3 3.5 4 4.5 5 5.5 iip3, oip3 vs. v dd (f=1.86+1.8601ghz, pin=-35dbm) oip3 (dbm) iip3 (dbm) v dd (v) 17 18 19 20 21 6.25 6.5 6.75 7 7.25 -40 -20 0 20 40 60 80 100 gain, i dd vs. temperature (v dd =2.8v, f=1.86ghz) gain (db) i dd (ma) temperature ( ) o c 0.8 1.2 1.6 2 2.4 2.8 1 2 3 4 5 6 -40 -20 0 20 40 60 80 100 nf, p-1db vs. temperature (v dd =2.8v, f=1.86ghz) nf (db) p-1db (dbm) temperature ( ) o c -5 -4 -3 -2 -1 0 1 2 3 10 11 12 13 14 15 16 17 18 -40 -20 0 20 40 60 80 100 iip3, oip3 vs. temperature (v dd =2.8v, f=1.86+1.8601ghz, pin=-35dbm) iip3 (dbm) oip3 (dbm) temperature ( ) o c equations of oip3 and iip3 2 3 im - pout 3 = 3 oip gain - 3 oip = 3 iip @ pin= - 40dbm
NJG1105F - 9 - n typical characteristics (1.8ghz band) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s11 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s11 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s22 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s22 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s21 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s21 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s12 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s12 (db) frequency (ghz)
NJG1105F - 10 - n typical characteristics (1.9ghz band) -25 -20 -15 -10 -5 0 5 10 15 20 25 -50 -40 -30 -20 -10 0 10 20 30 40 50 1 1.5 2 2.5 3 s21,s11,s22,s12 vs. frequency (v dd =2.8v,i dd =6.5ma) s21,s11,s22 (db) s12 (db) frequency (ghz) s11 s22 s21 s12 17 17.5 18 18.5 19 19.5 20 2.5 3 3.5 4 4.5 5 5.5 gain vs. v dd (f=1.96ghz) v dd (v) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout (dbm) pin (dbm) output power vs. input power (v dd =2.8v,f=1960mhz) +4.3dbm p-1db -80 -70 -60 -50 -40 -30 -20 -10 0 10 -40 -35 -30 -25 -20 -15 -10 -5 0 (v dd =2.8v,i dd =6.5ma,f=1960+1960.1mhz) pin vs. pout,im3 pin (dbm) pout,im3 (dbm) iip3 -2.4dbm im3 pout 1.3 1.4 1.5 1.6 1.7 1.8 6.2 6.4 6.6 6.8 7 7.2 2.5 3 3.5 4 4.5 5 5.5 nf, i dd vs. v dd (f=1.96ghz) nf (db) i dd (ma) v dd (v) 4 8 12 16 20 24 1.4 1.8 2.2 2.6 3 3.4 1.8 1.84 1.88 1.92 1.96 2 nf,gain vs. frequency (v dd =2.8v,i dd =6.5ma) nf (db) gain (db) frequency (ghz)
NJG1105F - 11 - n typ ical characteristics (1.9ghz band) -6 -4 -2 0 2 4 6 8 2.5 3 3.5 4 4.5 5 5.5 p-1db vs. v dd (f=1.96ghz) p-1db (dbm) v dd (v) -4 -3 -2 -1 0 1 2 3 4 5 6 9 10 11 12 13 14 15 16 17 18 19 2.5 3 3.5 4 4.5 5 5.5 iip3, oip3 vs. v dd (f=1.96+1.9601ghz, pin=-35dbm) oip3 (dbm) iip3 (dbm) v dd (v) 16 17 18 19 20 6.25 6.5 6.75 7 7.25 -40 -20 0 20 40 60 80 100 gain, i dd vs. temperature (v dd =2.8v, f=1.96ghz) gain (db) i dd (ma) temperature ( ) o c 0.8 1.2 1.6 2 2.4 2.8 0 1 2 3 4 5 -40 -20 0 20 40 60 80 100 nf, p-1db vs. temperature (v dd =2.8v, f=1.96ghz) nf (db) p-1db (dbm) temperature ( ) o c -5 -4 -3 -2 -1 0 1 2 3 11 12 13 14 15 16 17 18 19 -40 -20 0 20 40 60 80 100 iip3, oip3 vs. temperature (v dd =2.8v, f=1.96+1.9601ghz, pin=-35dbm) iip3 (dbm) oip3 (dbm) temperature ( ) o c equations of oip3 and iip3 2 3 im - pout 3 = 3 oip gain - 3 oip = 3 iip @ pin= - 40dbm
NJG1105F - 12 - n typical characteristics (1.9ghz band) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s11 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s11 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s22 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s22 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s21 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s21 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s12 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.5ma) s12 (db) frequency (ghz)
NJG1105F - 13 - n typical characteristics (2.1ghz band) 14 14.5 15 15.5 16 16.5 17 2.5 3 3.5 4 4.5 5 5.5 gain vs. v dd (f=2.14ghz) v dd (v) gain (db) -25 -20 -15 -10 -5 0 5 10 15 20 25 -50 -40 -30 -20 -10 0 10 20 30 40 50 1 1.5 2 2.5 3 s21,s11,s22,s12 vs. frequency (v dd =2.8v,i dd =6.4ma) s21,s11,s22 (db) s12 (db) frequency (ghz) s11 s22 s21 s12 -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout (dbm) pin (dbm) output power vs. input power (v dd =2.8v,f=2140mhz) +4.2dbm p-1db -80 -70 -60 -50 -40 -30 -20 -10 0 10 -40 -35 -30 -25 -20 -15 -10 -5 0 (v dd =2.8v,i dd =6.4ma,f=2140+2140.1mhz) pin vs. pout,im3 pin (dbm) pout,im3 (dbm) iip3 +1.2dbm im3 pout 4 8 12 16 20 24 1.4 1.8 2.2 2.6 3 3.4 2 2.04 2.08 2.12 2.16 2.2 nf,gain vs. frequency (v dd =2.8v,i dd =6.4ma) nf (db) gain (db) frequency (ghz) 1.3 1.4 1.5 1.6 1.7 1.8 6.2 6.4 6.6 6.8 7 7.2 2.5 3 3.5 4 4.5 5 5.5 nf, i dd vs. v dd (f=2.14ghz) nf (db) i dd (ma) v dd (v)
NJG1105F - 14 - n typical characteristics (2.1ghz band) -6 -4 -2 0 2 4 6 8 2.5 3 3.5 4 4.5 5 5.5 p-1db vs. v dd (f=2.14ghz) p-1db (dbm) v dd (v) -4 -3 -2 -1 0 1 2 3 4 5 6 10 11 12 13 14 15 16 17 18 19 20 2.5 3 3.5 4 4.5 5 5.5 iip3, oip3 vs. v dd (f=2.14+2.1401ghz, pin=-35dbm) oip3 (dbm) iip3 (dbm) v dd (v) 14 15 16 17 18 5.5 5.75 6 6.25 6.5 -40 -20 0 20 40 60 80 100 gain, i dd vs. temperature (v dd =2.8v, f=2.14ghz) gain (db) i dd (ma) temperature ( ) o c 0.8 1.2 1.6 2 2.4 2.8 0 1 2 3 4 5 -40 -20 0 20 40 60 80 100 nf, p-1db vs. temperature (v dd =2.8v, f=2.14ghz) nf (db) p-1db (dbm) temperature ( ) o c -1 0 1 2 3 4 5 6 7 12 13 14 15 16 17 18 19 20 -40 -20 0 20 40 60 80 100 iip3, oip3 vs. temperature (v dd =2.8v, f=2.14+2.1401ghz, pin=-35dbm) iip3 (dbm) oip3 (dbm) temperature ( ) o c equations of oip3 and iip3 2 3 im - pout 3 = 3 oip gain - 3 oip = 3 iip @ pin= - 40dbm
NJG1105F - 15 - n typical characteristics (2.1ghz band) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s11 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.4ma) s11 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s22 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.4ma) s22 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s21 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.4ma) s21 (db) frequency (ghz) -25 -20 -15 -10 -5 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 s12 vs. frequency ( to 20ghz) (v dd =2.8v,i dd =6.4ma) s12 (db) frequency (ghz)
NJG1105F - 16 - n typical characteristics (1.8ghz b and: high gain version) -25 -20 -15 -10 -5 0 5 10 15 20 25 -50 -40 -30 -20 -10 0 10 20 30 40 50 1 1.5 2 2.5 3 s21,s11,s22,s12 vs. frequency (v dd =2.8v,i dd =6.8ma) s21,s11,s22 (db) s12 (db) frequency (ghz) s11 s22 s21 s12 4 8 12 16 20 24 1 1.4 1.8 2.2 2.6 3 1.8 1.84 1.88 1.92 1.96 2 nf,gain vs. frequency (v dd =2.8v,i dd =6.8ma) nf (db) gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout (dbm) pin (dbm) output power vs. input power (v dd =2.8v,f=1860mhz) +4.6dbm p-1db -80 -70 -60 -50 -40 -30 -20 -10 0 10 -40 -35 -30 -25 -20 -15 -10 -5 0 (v dd =2.8v,i dd =6.8ma,f=1860+1860.1mhz) pin vs. pout,im3 pin (dbm) pout,im3 (dbm) iip3 -4.1dbm im3 pout
NJG1105F - 17 - n typical characteristics (1.9ghz band: high gain version) -25 -20 -15 -10 -5 0 5 10 15 20 25 -50 -40 -30 -20 -10 0 10 20 30 40 50 1 1.5 2 2.5 3 s21,s11,s22,s12 vs. frequency (v dd =2.8v,i dd =6.6ma) s21,s11,s22 (db) s12 (db) frequency (ghz) s11 s22 s21 s12 -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout (dbm) pin (dbm) output power vs. input power (v dd =2.8v,f=1960mhz) +4.4dbm p-1db -80 -70 -60 -50 -40 -30 -20 -10 0 10 -40 -35 -30 -25 -20 -15 -10 -5 0 (v dd =2.8v,i dd =6.6ma,f=1960+1960.1mhz) pin vs. pout,im3 pin (dbm) pout,im3 (dbm) iip3 -4.8dbm im3 pout 4 8 12 16 20 24 1.6 2 2.4 2.8 3.2 3.6 1.8 1.84 1.88 1.92 1.96 2 nf,gain vs. frequency (v dd =2.8v,i dd =6.6ma) nf (db) gain (db) frequency (ghz)
NJG1105F - 18 - n typical characteristics (2.1ghz band: high gain version 1) -25 -20 -15 -10 -5 0 5 10 15 20 25 -50 -40 -30 -20 -10 0 10 20 30 40 50 1 1.5 2 2.5 3 s21,s11,s22,s12 vs. frequency (v dd =2.8v,i dd =6.8ma) s21,s11,s22 (db) s12 (db) frequency (ghz) s11 s22 s21 s12 -30 -25 -20 -15 -10 -5 0 5 10 -40 -35 -30 -25 -20 -15 -10 -5 0 pout (dbm) pin (dbm) output power vs. input power (v dd =2.8v,f=2140mhz) +3.4dbm p-1db -80 -70 -60 -50 -40 -30 -20 -10 0 10 -40 -35 -30 -25 -20 -15 -10 -5 0 (v dd =2.8v,i dd =6.8ma,f=2140+2140.1mhz) pin vs. pout,im3 pin (dbm) pout,im3 (dbm) iip3 -3.4dbm im3 pout 4 8 12 16 20 24 1.8 2.2 2.6 3 3.4 3.8 2 2.04 2.08 2.12 2.16 2.2 nf,gain vs. frequency (v dd =2.8v,i dd =6.8ma) nf (db) gain (db) frequency (ghz)
NJG1105F - 19 - n recommended circuit 4 5 6 1 2 3 (top view) rfin rfout vdd c1 c2 c4 l3 l5 l4 c3 r1 l1 l2
NJG1105F - 20 - n recommended pcb design table 1 parts list 1 constant comment parts id 1.8ghz band 1.9ghz band 2.1ghz band l1 3.9nh 3.3nh 3.3nh taiyo - yuden (hk1005) l2 3.9nh 3.3nh 3.3nh taiyo - yuden (hk1608) l3 12nh 27nh 12nh taiyo - yuden (hk1005) l4 68nh 22nh 12nh taiyo - yuden (hk1005) c1 0.01uf 0.01uf 0.01uf murata (grm36) c2 0.01 uf 0.01uf 0.01uf murata (grm36) c3 4pf 4pf 4pf murata (grm36) c4 39pf 13pf 3pf murata (grm36) r1 330 w 330 w 330 w 1005 size table 2 parts list 2 (high gain version) constant comment parts id 1.8ghz band 1.9ghz band 2.1ghz band 1 2.1ghz band 2 l1 3. 3nh 2.7nh 3.9nh 3.3nh taiyo - yuden (hk1005) l2 3.9nh 3.3nh 1.5nh 2.7nh taiyo - yuden (hk1608) l3 39nh 68nh 100nh 39nh taiyo - yuden (hk1005) l4 68nh 22nh 15nh 8.2nh taiyo - yuden (hk1005) c1 0.01uf 0.01uf 0.01uf 0.01uf murata (grm36) c2 0.01uf 0.01uf 0.01uf 0.01uf murata (grm36) c3 4pf 3pf 2pf 2pf murata (grm36) c4 16pf 8pf 1.5pf 5pf murata (grm36) r1 330 w 330 w 330 w 330 w 1005 size pcb: fr4 t=0.2mm microstrip line width=0.4mm(zo=50 w ) pcb size: 14.0 x 14.0mm l1 l2 l3 l4 c4 c1 c2 c3 r1 rfin rfout vdd
NJG1105F - 21 - n p ackage outline (mtp6) lead material : copper lead surface finish : solder plating molding material : epoxy resin unit : mm weight : 14mg caution s on using thi s product this product contains gallium - arsenide (gaas) which is a harmful material. do not eat or put in to mouth. do not dispose in fire or break up this product. do not chemically make gas or powder with this product . to wast e th i s product, please obey the relati ng law of your country. this product may be damaged with electric static discharge (esd) or spike voltage . p lease hand le with care to avoid these damages . [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. 1 . 9 0 . 2 0 . 1 3 - 0 . 0 3 + 0 . 1 0 . 9 5 1 . 6 - 0 . 1 + 0 . 2 2 . 8 0 . 2 6 5 4 3 2 0 . 1 m a x 2 . 9 0 . 2 1 0 . 3 0 . 1 1 . 1 + 0 . 2 - 0 . 1 0 . 6 0 . 1

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